Bandgap Reference
Contents
Bandgap Reference#
The need for temperature-independent references are essential for modern applications and rapidly changing environments. This article discusses the negative and positive temperature coefficients (TC) of a bipolar device and how to cancel their effects to create a stable reference.
CTAT: Complementary to Absolute Temperature#
For a bipolar device, the forward voltage of a pn-junction diode exhibits a negative TC.
Thus, at \(T=300K\) and \(V_{BE} \approx 750\)mV, the change in TC voltage with respect to temperature is \(\partial V_{BE}/ \partial T \approx -1.5\)mV.
PTAT: Proportional to Absolute Temperature#
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Fig. 2 PTAT Circuit#
Figure 1 shows two bipolar transistors operating with ideal current sources. The difference between their base-emitter voltages is directly proportional to absolute temperature. The circuit emphasizes design choices by scaling bias current n and number of devices m.
The positive temperature coefficient is proportional to \(\frac{k}{q}\) such that
Bandgap Reference#
Now a temperature independent reference can be obtained by combining the negative and positive coefficients mentioned previously. The reference is defined as
For simplicity, \(\alpha_1\) is chosen to be 1. Then \(V_{REF}\) is
where \(m\) is the number of devices.